Search results for "effect [finite size]"
showing 10 items of 105 documents
Predictive dead time controller for GaN-based boost converters
2017
A dynamic dead time controller is presented, specifically intended to operate in synchronous boost converters based on GaN field-effect transistor switches. These transistors have a reduced stored charge with respect to silicon metal–oxide–semiconductor field-effect transistors with similar breakdown voltage and series resistance, and can operate at higher frequencies with reduced switching losses. On the other hand, the voltage drop in reverse conduction is typically more than doubled with respect to silicon devices resulting in relevant power losses during the free-wheeling phases. Therefore, dynamic control of dead time can be profitably applied even in converters operating in the tens o…
Failure Estimates for SiC Power MOSFETs in Space Electronics
2018
Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space. peerReviewed
Negative differential resistance in carbon nanotube field-effect transistors with patterned gate oxide.
2010
We demonstrate controllable and gate-tunable negative differential resistance in carbon nanotube field-effect transistors, at room temperature and at 4.2 K. This is achieved by effectively creating quantum dots along the carbon nanotube channel by patterning the underlying, high-kappa gate oxide. The negative differential resistance feature can be modulated by both the gate and the drain-source voltage, which leads to more than 20% change of the current peak-to-valley ratio. Our approach is fully scalable and opens up a possibility for a new class of nanoscale electronic devices using negative differential resistance in their operation.
High-Yield of Memory Elements from Carbon Nanotube Field-Effect Transistors with Atomic Layer Deposited Gate Dielectric
2008
Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to randomly display varying amounts of hysteresis in their transfer characteristics. The hysteresis is often attributed to charge trapping in the dielectric layer between the nanotube and the gate. This study includes 94 CNT FET samples, providing an unprecedented basis for statistics on the hysteresis seen in five different CNT-gate configurations. We find that the memory effect can be controlled by carefully designing the gate dielectric in nm-thin layers. By using atomic layer depositions (ALD) of HfO$_{2}$ and T…
Three-dimensional Hall effect accelerometer for recording head movements of freely moving laboratory animals
1991
A Hall effect device was constructed for a measurement of head movements in three spatial dimensions during classical conditioning experiments in cats. A Hall sensor was used to detect movements of a magnetic fragment floating in a small (15 x 15 mm) cube. The magnetic fragment was kept in the centre of the sealed cube with a thin coil spring which was filled with thin oil for damping excessive afteroscillations. A comparison of this device to a commercial accelerometer showed that the accuracy of the Hall device is sufficient for the movement recordings and that the device is sensitive also to slowly accelerating movements. The construction is compact and can be easily mounted, for example…
Optical and electrochemical DNA nanobiosensors
2011
In the past two decades, nanoscale advanced materials have been explored for biosensing molecules, so new horizons have opened up for identifying and quantifying biomolecules, and possible early diagnosis of diseases. DNA nanobiosensors show promise. This article provides an overview on their optical and electrochemical aspects. We discuss recent progress in this field, describing basic concepts of molecular beacons and quantum dots as optical nano-imaging systems. Also, carbon nanotubes provide a platform for development and advancement of electrochemical DNA nanobiosensors, which are increasingly being implemented as robust tools for detection in biomedical sciences. Refereed/Peer-reviewed
Anodized Ti-Si Alloy as Gate Oxide of Electrochemically-Fabricated Organic Field-Effect Transistors
2013
Organic field-effect transistors were fabricated using an electrochemical route. The dielectric oxide was grown by anodization of a Ti:Si alloy, while 3,4-polyethylenedioxythiophene has been employed as a semiconducting polymer. OutputI-Vcharacteristics showed a transistor effect dependent on dielectric thickness. Fitting between I-V measurements and theoretical simulations in the triode region confirmed the presence of a conduction path through the polymer which degrades the electrical characteristics of the devices.
Electrochemical fabrication of metal/oxide/conducting polymer junction
2011
After discovery of conducting polymers and the possibility to modify their electrical properties from insulating to metallic like behavior by doping and a careful choice of the processing conditions, a large amount of research effort has been devoted to the theoretical understanding of their solid state properties as well as to exploit the possible application of conducting polymers in many technological fields including large area organic electronics, polymer photovoltaic cell, and sensors. 1-4 Organic thin film transistors appear very promising devices for the development of low cost, flexible, and disposable plastic electronics. In order to reduce the operating voltage it has been sugges…
Organic Thin-Film Transistors with Enhanced Sensing Capabilities
2009
Organic thin-film transistors, used as sensing devices, have been attracting quite a considerable interest lately as they offer advantages such as multi parameter behaviour and possibility to be quite easily molecularly tuned for the detection of specific analytes. Here, a study on the dependences of the devices responses on important parameters such as the active layer thickness and its morphology as well as on the transistor channel length is presented. To introduce the least number of variables the system chosen for this study is quite a simple and well assessed one being based on a thiophene oligomer active layer exposed to 1-butanol vapours.
Determination of charge carrier mobility of hole transporting polytriarylamine-based diodes
2010
Hole transport properties of three different side chain poly(triarylamines) have been determined by means of the analysis of steady-state current-voltage characteristics using co-planar diode structures. The interpretation is based on space-charge limited models with field-dependent mobility. Mobilities between ~ 10- 8 and 10- 6 cm2 V- 1 s- 1 are obtained. The highest mobility is achieved for poly(tetraphenylbenzidine) devices and the lowest for poly(triphenylamine) devices. Electron-rich methoxy substituents increase the mobility of poly(triphenylamine)s. A comparison of the mobility values with those obtained using organic field-effect transistors is also given. © 2009 Elsevier B.V. All r…